Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sung-Taeg Kang0
Rode R. Mora0
Date of Patent
May 10, 2011
0Patent Application Number
121034510
Date Filed
April 15, 2008
0Patent Primary Examiner
Patent abstract
A non-volatile memory (NVM) cell comprising a layer of discrete charge storing elements, a control gate, and a select gate is provided. The control gate has a first sidewall with a lower portion being at least a first angle 10 degrees away from 90 degrees with respect to substrate. Further, the select gate has a second sidewall with a lower portion being at least a second angle at least 10 degrees away from 90 degrees with respect to the substrate. The NVM cell further comprises a layer of dielectric material located between the first sidewall and the second sidewall.
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