Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 10, 2011
Patent Application Number
12028585
Date Filed
February 8, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device includes a gate electrode formed through a gate insulating film provided on a first impurity region and a drift layer, and this gate electrode consists of two regions including a first conductivity type second impurity region opposed to the first impurity region and a third impurity region capable of forming a depletion layer.
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