Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuji Watanabe0
Kunihito Oshima0
Masato Itoi0
Toshiyuki Takemori0
Fuminori Sasaoka0
Kazushige Matsuyama0
Date of Patent
May 10, 2011
0Patent Application Number
120943120
Date Filed
November 22, 2005
0Patent Primary Examiner
Patent abstract
A trench gate power MOSFET (1) includes: an n−-type epitaxial layer (12); a p-type body region (20) formed in the vicinity of an upper surface of the n−-type epitaxial layer (12); a plurality of trenches (14) formed so as to reach the n−-type epitaxial layer (12) from an upper surface of the p-type body region (20); and gates (18) formed in the trenches (14). In some regions facing the p-type body region (20) in the n−-type epitaxial layer (12), p-type carrier extracting regions (26a, 26b, 26c) are formed. According to the trench gate power MOSFET (1), holes generated in a cell region can be effectively collected through the p-type carrier extracting regions (26a, 26b, 26c) so as to further increase a speed of the switching operation.
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