Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
James F. Buller0
Jian Chen0
Date of Patent
May 17, 2011
0Patent Application Number
113832950
Date Filed
May 15, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in the semiconducting substrate, a first conductive contact that is conductively coupled to the anode and a second conductive contact that is conductively coupled to the cathode.
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