Patent attributes
The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semiconductor integrated circuit or the like in the semiconductor die, a supporting body formed on the pad electrodes, an insulation film formed on the side and back surface portions of the semiconductor die, wiring layers connected to the back surfaces of the pad electrodes and extending from the side surface portion onto the back surface portion of the semiconductor die so as to contact the insulation film, and a second protection film formed on the side surface portion of the supporting body.
