Patent 7947966 was granted and assigned to Axcelis Technologies on May, 2011 by the United States Patent and Trademark Office.
An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.