Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hitoshi Mitani0
Date of Patent
May 24, 2011
Patent Application Number
12320186
Date Filed
January 21, 2009
Patent Primary Examiner
Patent abstract
Semiconductor devices required forming a stress control film to handle different stresses on each side when optimizing the stress on the respective P channel and N channel sections. A unique feature of the semiconductor device of this invention is that P and N channel stress are respectively optimized by making use of a stress control film jointly for the P and N channels that conveys stress in different directions by utilizing the film thickness.
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