Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeshi Honda0
Nobuyuki Ishiwata0
Shuichi Tahara0
Tadahiko Sugibayashi0
Noboru Sakimura0
Date of Patent
May 24, 2011
Patent Application Number
12515898
Date Filed
November 12, 2007
Patent Primary Examiner
Patent abstract
An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.
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