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US Patent 7951728 Method of improving oxide growth rate of selective oxidation processes

Patent 7951728 was granted and assigned to Applied Materials on May, 2011 by the United States Patent and Trademark Office.

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Patent abstract

A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

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