Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 14, 2011
Patent Application Number
11726516
Date Filed
March 22, 2007
Patent Primary Examiner
Patent abstract
One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.
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