Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 14, 2011
Patent Application Number
11540155
Date Filed
September 29, 2006
Patent Primary Examiner
Patent abstract
A method for fabricating a thin film transistor and a thin film transistor includes a polycrystalline silicon layer formed by irradiating an amorphous silicon layer with a laser beam through an organic layer formed on the amorphous silicon layer and removing the organic layer.
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