US Patent 7960769 Solid-state imaging device and method for manufacturing same

In a CMOS image sensor, an N-type semiconductor layer is formed on a P-type semiconductor substrate. P-type semiconductor regions are formed in one part of the semiconductor layer over the entire length of the thickness direction of the semiconductor layer in a lattice-like shape as viewed from above to compartment the semiconductor layer into a plurality of regions. Furthermore, a red filter, a green filter and a blue filter are provided in a red picture element, a green picture element and a blue picture element, respectively. Moreover, an N-type buried semiconductor layer being in contact with the semiconductor layer is formed in an immediately lower region of the red filter in an upper layer part of the semiconductor substrate.