US Patent 7961495 Programmable resistance memory with feedback control
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Patent abstract
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
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Patent Inventor Names
Ward Parkinson0
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US Patent 07961495 Programmable resistance memory with feedback control US Patent 7961495 Programmable resistance memory with feedback control
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Patent Number
07961495
Patent Number
7961495
Edits on 7 Dec, 2021
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US Patent 07961495 Programmable resistance memory with feedback control
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Is a
Patent jurisdiction
Patent number
07961495
Date of patent
June 14, 2011
Patent application number
12287986
Date Filed
October 15, 2008
Patent primary examiner
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