Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masao Shinozaki0
Date of Patent
June 14, 2011
Patent Application Number
12432796
Date Filed
April 30, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
There is provided a technique for ensuring both an SNM and a write margin simultaneously in a semiconductor device having static memory cells. A semiconductor device has a plurality of static memory cells. The semiconductor device includes a memory cell array having the static memory cells arranged in a matrix, a temperature sensor circuit for sensing a temperature in the semiconductor device, and a word driver for controlling a voltage supplied to a word line of the memory cell array based on an output of the temperature sensor circuit at the time of writing to or reading from a memory cell.
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