US Patent 7964471 Methods of forming capacitors
Patent 7964471 was granted and assigned to Micron Technology on June, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.
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US Patent 07964471 Methods of forming capacitors US Patent 7964471 Methods of forming capacitors
Infobox
Patent Number
0796447100
Patent Number
796447100
Edits on 27 Mar, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079644710
Date of Patent
June 21, 2011
0Patent Application Number
127163950
Date Filed
March 3, 2010
0Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079644710
Date of Patent
June 21, 2011
0Patent Application Number
127163950
Date Filed
March 3, 2010
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07964471 Methods of forming capacitors
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07964471
Date of patent
June 21, 2011
Patent application number
12716395
Date Filed
March 3, 2010
Patent primary examiner
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