US Patent 7964483 Growth method for nitride semiconductor epitaxial layers

The present invention relates to a method for growing a nitride semiconductor epitaxial layer, which comprises the steps of growing a second nitride semiconductor epitaxial layer on a first nitride semiconductor epitaxial layer at a first temperature, growing a third nitride semiconductor epitaxial layer on the second nitride semiconductor epitaxial layer at a second temperature, and releasing nitrogen from the second nitride semiconductor epitaxial layer by increasing a temperature to a third temperature higher than the second temperature, thereby, it is possible to lower the defect density of epitaxial layers and reduce warpage of a substrate.