Patent attributes
A multilayer dielectric substrate that mounts a semiconductor device in a cavity formed on a substrate. The multilayer dielectric substrate includes an opening formed in a surface-layer grounding conductor on the substrate in the cavity, and an impedance transformer, with a length of about ¼ of an in-substrate effective wavelength of a signal wave, electrically connected through the opening to the cavity. The multilayer dielectric substrate further includes a short-circuited end dielectric transmission line with a length of about ¼ of the in-substrate effective wavelength of the signal wave, a coupling opening formed on an inner-layer grounding conductor in a connecting section of the impedance transformer and the dielectric transmission line, and a resistor formed in the coupling opening.
