Patent attributes
A light emitting device has a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a narrow electrode having a current feeding part provided on a region of a part above of the first semiconductor layer for supplying an electric current from outside to the semiconductor multilayer structure, and a narrow electrode provided adjacent to the current feeding part for reflecting a light emitted from the active layer, and a surface center electrode part electrically connected to the narrow electrode, and provided above the first semiconductor layer via a transmitting layer for transmitting the light.
