US Patent 7968939 Semiconductor device and method of manufacturing the same
Patent 7968939 was granted and assigned to Renesas Electronics on June, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.
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US Patent 07968939 Semiconductor device and method of manufacturing the same US Patent 7968939 Semiconductor device and method of manufacturing the same
Infobox
Patent Number
0796893900
Patent Number
796893900
Edits on 30 Mar, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079689390
Date of Patent
June 28, 2011
0Patent Application Number
129548770
Date Filed
November 28, 2010
0Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079689390
Date of Patent
June 28, 2011
0Patent Application Number
129548770
Date Filed
November 28, 2010
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07968939 Semiconductor device and method of manufacturing the same
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07968939
Date of patent
June 28, 2011
Patent application number
12954877
Date Filed
November 28, 2010
Patent primary examiner
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