Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuji Okamura0
Shingo Ohta0
Takashi Nakamura0
Tatsuya Kiriyama0
Date of Patent
July 5, 2011
0Patent Application Number
119753660
Date Filed
October 18, 2007
0Patent Primary Examiner
Patent abstract
A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
