US Patent 7973413 Through-substrate via for semiconductor device

A semiconductor device including a substrate having a front surface and a back surface is provided. A plurality of interconnect layers are formed on the front surface and have a first surface opposite the front surface of the substrate. A tapered profile via extends from the first surface of the plurality of interconnect layers to the back surface of the substrate. In one embodiment, a insulating layer is formed on the substrate and includes an opening, and wherein the opening includes conductive material providing contact to the tapered profile via.