Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tetsuzo Ueda0
Daisuke Ueda0
Date of Patent
July 5, 2011
0Patent Application Number
126868390
Date Filed
January 13, 2010
0Patent Primary Examiner
Patent abstract
A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
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