Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chiharu Ota0
Johji Nishio0
Takashi Shinohe0
Date of Patent
July 12, 2011
Patent Application Number
12277749
Date Filed
November 25, 2008
Patent Primary Examiner
Patent abstract
A semiconductor substrate includes a silicon carbide substrate having a first impurity concentration, a first silicon carbide layer formed on the silicon carbide substrate and having a second impurity concentration, and a second silicon carbide layer of a first conductivity type formed on the first silicon carbide layer and having a third impurity concentration, wherein the second impurity concentration is higher the an either the first impurity concentration or the third impurity concentration.
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