Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Noboru Ichinose0
Encarnacion Antonia Garcia Villora0
Kazuo Aoki0
Kiyoshi Shimamura0
Date of Patent
July 12, 2011
Patent Application Number
10567369
Date Filed
August 4, 2004
Patent Primary Examiner
Patent abstract
To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained.
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