US Patent 7977707 Capacitorless DRAM having a hole reserving unit
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Patent abstract
Provided are a capacitorless DRAM and methods of manufacturing the same. The capacitorless DRAM may include a substrate including a source, a drain and a channel, a gate on the channel of the substrate, and a hole reserving unit below the channel.
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Patent Inventor Names
Jae-woong Hyun0
Jai-kwang Shin0
Ki-ha Hong0
Young-gu Jin0
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US Patent 07977707 Capacitorless DRAM having a hole reserving unit US Patent 7977707 Capacitorless DRAM having a hole reserving unit
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Patent Number
07977707
Patent Number
7977707
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US Patent 07977707 Capacitorless DRAM having a hole reserving unit
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Is a
Patent jurisdiction
Patent number
07977707
Date of patent
July 12, 2011
Patent application number
12005399
Date Filed
December 27, 2007
Patent primary examiner
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