US Patent 7978440 Seed/AFM combination for CCP GMR device
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Patent abstract
Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.
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Patent Inventor Names
Cheng T. Horng0
Cherng Chyi Han0
Min Li0
Ru-Ying Tong0
Yu-Hsia Chen0
Yue Liu0
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US Patent 07978440 Seed/AFM combination for CCP GMR device US Patent 7978440 Seed/AFM combination for CCP GMR device
Infobox
Patent Number
079784400
Patent Number
79784400
Edits on 27 Mar, 2023
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Infobox
Is a
Patent Jurisdiction
Patent Number
079784400
Date of Patent
July 12, 2011
0Patent Application Number
120081510
Date Filed
January 9, 2008
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
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Infobox (+7 properties)
US Patent 07978440 Seed/AFM combination for CCP GMR device
Infobox
Is a
Patent jurisdiction
Patent number
07978440
Date of patent
July 12, 2011
Patent application number
12008151
Date Filed
January 9, 2008
Patent primary examiner
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