US Patent 7978511 Data line management in a memory device

Methods for programming a memory device, memory devices configured to perform the disclosed programming methods, and memory systems having a memory device configured to perform the disclosed programming methods are provided. According to at least one such method, multiple pages of memory cells are inhibited during a programming operation such that memory cells enabled for programming are separated by two or more inhibited memory cells of the same row of memory cells regardless of the intended pattern of data states to be programmed into that row of memory cells.