US Patent 7978902 Calibration method, inspection method, and semiconductor device manufacturing method

According to an aspect of the invention, there is provided a calibration method of performing contrast threshold calibration in extracting a pattern edge from an image of a pattern formed on a processing target substrate, including simulating formation of the pattern to detect a portion predicted to have shorted or opened in the pattern, calculating a contrast of an image of the pattern including the portion predicted to have shorted or opened, and determining a threshold from the contrast, the threshold avoiding extraction of a pattern edge in the portion predicted to have shorted or opened.