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US Patent 7979836 Split-gate DRAM with MuGFET, design structure, and method of manufacture

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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
79798360
Patent Inventor Names
Brent A. Anderson0
Edward J. Nowak0
Date of Patent
July 12, 2011
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Patent Application Number
121925540
Date Filed
August 15, 2008
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Patent Primary Examiner
‌
Naum Levin
0
Patent abstract

A semiconductor structure for a dynamic random access memory cell, the structure including: a fin of a fin-type field effect transistor (FinFET) device formed over and spaced apart from a conductive region of a substrate; a storage capacitor connected to a first end of the fin; and a back-gate at a first lateral side of the fin and in electrical contact with the conductive region.

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