US Patent 7981592 Double patterning method
Patent 7981592 was granted and assigned to SanDisk on July, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask.
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Patent Inventor Names
Michael Chan0
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US Patent 07981592 Double patterning method US Patent 7981592 Double patterning method
Infobox
Patent Number
079815920
Patent Number
79815920
Edits on 26 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079815920
Date of Patent
July 19, 2011
0Patent Application Number
122222930
Date Filed
August 6, 2008
0Patent Primary Examiner
Edits on 8 Dec, 2021
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Infobox (+8 properties)
US Patent 07981592 Double patterning method
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07981592
Date of patent
July 19, 2011
Patent application number
12222293
Date Filed
August 6, 2008
Patent primary examiner
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