Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 19, 2011
Patent Application Number
12258269
Date Filed
October 24, 2008
Patent Primary Examiner
Patent abstract
The present invention relates to a method of forming junctions of a semiconductor device. According to the method of forming junctions of a semiconductor device in accordance with an aspect of the present invention, there is provided a semiconductor substrate in which a transistor including the junctions are formed. A first thermal treatment process for forming a passivation layer over the semiconductor substrate including the junctions is performed. Here, the passivation layer functions to prevent impurities within the junctions from being drained. A pre-metal dielectric layer is formed over the semiconductor substrate including the passivation layer.
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