Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Pramod Subramonium0
Zhiyuan Fang0
Jon Henri0
Yongsik Yu0
Date of Patent
July 19, 2011
0Patent Application Number
117103770
Date Filed
February 22, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.
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