US Patent 7982204 Using unstable nitrides to form semiconductor structures
Patent 7982204 was granted and assigned to Intel on July, 2011 by the United States Patent and Trademark Office.
All edits
Edits on 28 Nov, 2023
Golden AI
Edits made to:
Article (+371 characters)
Article
Patent abstract
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
Edits on 16 Jul, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07982204 Using unstable nitrides to form semiconductor structures US Patent 7982204 Using unstable nitrides to form semiconductor structures
Infobox
Patent Number
0798220400
Patent Number
798220400
Edits on 28 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079822040
Date of Patent
July 19, 2011
0Patent Application Number
127886030
Date Filed
May 27, 2010
0Patent Primary Examiner
Edits on 24 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079822040
Date of Patent
July 19, 2011
0Patent Application Number
127886030
Date Filed
May 27, 2010
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07982204 Using unstable nitrides to form semiconductor structures
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07982204
Date of patent
July 19, 2011
Patent application number
12788603
Date Filed
May 27, 2010
Patent primary examiner
Find more entities like US Patent 7982204 Using unstable nitrides to form semiconductor structures
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
