Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Umesh K. Mishra0
Stacia Keller0
Steven P. Denbaars0
Tal Margalith0
James Stephen Speck0
Michael D. Craven0
Shuji Nakamura0
Date of Patent
July 19, 2011
0Patent Application Number
114720330
Date Filed
June 21, 2006
0Patent Primary Examiner
Patent abstract
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.
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