Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 19, 2011
Patent Application Number
12554516
Date Filed
September 4, 2009
Patent Primary Examiner
Patent abstract
A semiconductor device includes an anti-fuse portion and a memory cell portion each including a MOSFET structure having a gate insulating film formed on a semiconductor substrate and a gate electrode formed on the gate insulating film; wherein a depletion ratio in the gate electrode of the anti-fuse portion is different from the depletion ratio in the gate electrode of the memory cell portion, and the depletion ratio in the gate electrode of the anti-fuse portion is lower than the depletion ratio in the gate electrode of the memory cell portion.
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