US Patent 7983011 AP1 layer for TMR device
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Patent abstract
A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
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Patent Inventor Names
Chyu-Jiuh Torng0
Hui-Chuan Wang0
Tong Zhao0
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US Patent 07983011 AP1 layer for TMR device US Patent 7983011 AP1 layer for TMR device
Infobox
Patent Number
079830110
Patent Number
79830110
Edits on 3 Apr, 2023
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Infobox
Is a
Patent Jurisdiction
Patent Number
079830110
Date of Patent
July 19, 2011
0Patent Application Number
121520400
Date Filed
May 12, 2008
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 07983011 AP1 layer for TMR device
Infobox
Is a
Patent jurisdiction
Patent number
07983011
Date of patent
July 19, 2011
Patent application number
12152040
Date Filed
May 12, 2008
Patent primary examiner
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