A phase change memory apparatus is presented. The phase change memory apparatus includes a phase change memory cell, a sense amplifier, and a voltage selecting unit. The sense amplifier is configured to differentially amplify a current that through the memory cell and a comparison voltage. The voltage selecting unit is configured to provide a reference voltage as the comparison voltage when performing a normal read function and to selectively provide either a first voltage level or a second voltage level as the comparison voltage in accordance with data when performing a verify read function.