US Patent 7983093 Non-volatile memory cell with BTBT programming
Patent 7983093 was granted and assigned to Synopsys on July, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A Non-Volatile Memory (NVM) cell and programming method in which the cell can denote at least two logic levels (e.g., 0 and 1) and includes a read-transistor with a floating gate and a Band-To-Band-Tunneling device (BTBT device) sharing the floating gate with the read-transistor. The BTBT device is configured as an injection device for injecting a first charge onto the floating gate when the BTBT device is biased so that it is in accumulation, to set at least one of the logic levels.
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Patent Inventor Names
Andrew E. Horch0
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US Patent 07983093 Non-volatile memory cell with BTBT programming US Patent 7983093 Non-volatile memory cell with BTBT programming
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Patent Number
079830930
Patent Number
79830930
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079830930
Date of Patent
July 19, 2011
0Patent Application Number
124104170
Date Filed
March 24, 2009
0Patent Primary Examiner
Edits on 8 Dec, 2021
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US Patent 07983093 Non-volatile memory cell with BTBT programming
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07983093
Date of patent
July 19, 2011
Patent application number
12410417
Date Filed
March 24, 2009
Patent primary examiner
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