Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akiyoshi Seko0
Natsuki Sato0
Isamu Asano0
Date of Patent
July 26, 2011
0Patent Application Number
122890020
Date Filed
October 17, 2008
0Patent Primary Examiner
Patent abstract
An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory element whereby the lower electrode can be formed smaller. Combining an anisotropic etching process with an isotropic etching process enables the lower electrode to be formed smaller.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
