Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 26, 2011
Patent Application Number
12183287
Date Filed
July 31, 2008
Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the release of fluorine from this silicon oxide layer is suppressed. According to this semiconductor device manufacturing method, a stable semiconductor device can be provided such that the device includes a fluorine-containing silicon oxide film (FSG film) at which the release of fluorine is suppressed, and thus peeling does not occur.
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