Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takashi Sakoh0
Yoshihisa Matsubara0
Date of Patent
July 26, 2011
0Patent Application Number
123450150
Date Filed
December 29, 2008
0Patent Primary Examiner
Patent abstract
A semiconductor device 100 includes a first gate 210, which is formed using a gate last process. The first gate 210 includes a gate insulating film formed in a bottom surface in a first concave portion formed in the insulating film; a gate electrode formed over the gate insulating film in the first concave portion; and a protective insulating film 140 formed on the gate electrode in the first concave portion. In addition, the semiconductor device 100 includes a contact 134, which is coupled to the N-type impurity-diffused region 116a in the both sides of the first gate 210 and is buried in the second concave portion having a diameter that is large than the first concave portion.
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