Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mu-hui Park0
Beak-hyung Cho0
Hyung-rok Oh0
Date of Patent
July 26, 2011
0Patent Application Number
126909990
Date Filed
January 21, 2010
0Patent Primary Examiner
Patent abstract
In a phase-change random access memory (PRAM) device, a write operation is performed by applying a set pulse to failed PRAM cells. The set pulse comprises a plurality of stages sequentially decreasing from a first current magnitude to a second current magnitude. The first current magnitude or the second current magnitude varies from one write loop to another.
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