US Patent 7989347 Process for filling recessed features in a dielectric substrate

A process for filling recessed features of a dielectric substrate for a semiconductor device, comprises the steps (a) providing a dielectric substrate having a recessed feature in a surface thereof, wherein the smallest dimension (width) across said feature is less than ≦200 nm, a conductive layer being present on at least a portion of said surface, (b) filling said recessed feature with a conductive material, and (c) prior to filling said recessed feature with said conductive material, treating said surface with an accelerator.