US Patent 7994064 Selective etch for damage at exfoliated surface
Patent 7994064 was granted and assigned to Twin Creeks Technologies, Inc on August, 2011 by the United States Patent and Trademark Office.
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Ions are implanted into a silicon donor body, defining a cleave plane. A first surface of the donor body is affixed to a receiver element, and a lamina is exfoliated at the cleave plane, creating a second surface of the lamina. There is damaged silicon at the second surface, which will compromise the efficiency of a photovoltaic cell formed from the lamina. A selective etchant, having an etch rate which is positively correlated with the concentration of structural defects in silicon, is used to remove the damaged silicon at the second surface, while removing very little of the relatively undamaged lamina.
US Patent 07994064 Selective etch for damage at exfoliated surface US Patent 7994064 Selective etch for damage at exfoliated surface
US Patent 07994064 Selective etch for damage at exfoliated surface
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