Patent attributes
In a complementary metal-oxide semiconductor (CMOS) transistor and a method of manufacturing the same, a semiconductor channel material having a first conductivity type is provided on a substrate. A first transistor having the first conductivity type and a second transistor having a second conductivity type are positioned on the substrate, respectively. The first transistor includes a first gate positioned on a first surface of the channel material through a medium of a gate insulation layer and a pair of ohmic contacts positioned on a second surface of the channel material and crossing over both side portions of the first gate electrode, respectively. The second transistor includes a second gate positioned on the first surface of the channel material through a medium of the gate insulation layer and a pair of Schottky contacts positioned on the second surface of the channel material and crossing over both side portions of the second gate electrode, respectively.
