US Patent 7999297 Semiconductor device having stacked decoupling capacitors

A semiconductor device having transistors formed on different layers of a stack structure includes a stacked capacitor cluster, wherein a stacked capacitor of the stacked capacitor cluster includes an insulation layer of a transistor of the semiconductor device, and at least a first conduction layer and a second conduction layer disposed above and below the insulation layer, wherein the stacked capacitor is a decoupling capacitor of the stacked capacitor cluster connected in parallel between a first line and a second line.