Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroto Ootake0
Masayoshi Tagami0
Munehiro Tada0
Yoshihiro Hayashi0
Date of Patent
August 16, 2011
0Patent Application Number
122783390
Date Filed
February 6, 2007
0Patent Primary Examiner
Patent abstract
Provided is a wiring of the Damascene structure for preventing the TDDB withstand voltage degradation and for keeping the planarity to prevent the degradation of a focus margin. A trench wiring (213) is formed in an interlayer insulating film, which is composed of a silicon carbide-nitride film (205), a SiOCH film (206) and a silicon oxide film (207) [(e)]. The silicon oxide film (207) is etched at a portion adjacent to the wiring of a polished surface by dry etching or wet etching [(f)]. A silicon carbide-nitride film (SiCN) (214) is formed as a Cu cap film [(g)]. An interlayer insulating film is further formed thereon to form a conductive plug, a trench wiring and so on.
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