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US Patent 8003517 Method for forming interconnects for 3-D applications

Patent 8003517 was granted and assigned to Freescale Semiconductor on August, 2011 by the United States Patent and Trademark Office.

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Patent abstract

A method for forming an interconnect, comprising (a) providing a substrate (203) with a via (205) defined therein; (b) forming a seed layer (211) such that a first portion of the seed layer extends over a surface of the via, and a second portion of the seed layer extends over a portion of the substrate; (c) removing the second portion of the seed layer; and (d) depositing a metal (215) over the first portion of the seed layer by an electroless process.

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