Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naoya Okamoto0
Date of Patent
August 23, 2011
0Patent Application Number
121469460
Date Filed
June 26, 2008
0Patent Citations Received
0
Patent Primary Examiner
Patent abstract
A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate.
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