US Patent 8003547 Method of manufacturing semiconductor device
Patent 8003547 was granted and assigned to Hitachi on August, 2011 by the United States Patent and Trademark Office.
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A substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device are provided. The substrate processing apparatus comprises: a process chamber accommodating a substrate; a liquid source supply system supplying a liquid source into the process chamber; a solvent supply system supplying a solvent having a vapor pressure greater than that of the liquid source into the process chamber; a liquid flowrate control device controlling flowrates of the liquid source and the solvent; and a controller controlling the liquid source supply system, the solvent supply system, and the liquid flowrate control device so that the solvent is supplied into the liquid flowrate control device than the solvent supply system to confirm an operation of the liquid flowrate control device before the liquid source supply system supplies the liquid source into the process chamber.
US Patent 08003547 Method of manufacturing semiconductor device US Patent 8003547 Method of manufacturing semiconductor device
US Patent 08003547 Method of manufacturing semiconductor device
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